Substrate treatment apparatus

ABSTRACT

A substrate processing apparatus has a table on which a polishing surface for polishing a substrate is provided, and a discharge suction section which has a discharge port which communicates with a fluid supply source and through which a fluid is discharged to the polishing surface and a suction opening which communicates with a vacuum source and through which the fluid existing on the polishing surface is sucked.

RELATED APPLICATION

This application claims the benefit of Patent Application No.2016-85184, filed on Apr. 21, 2016 in Japan, the contents of which areincorporated herein by reference.

TECHNICAL FIELD

The present technique relates to a substrate processing apparatus.

BACKGROUND ART

Conventionally, a substrate processing apparatus (for example, aChemical Mechanical Polishing (CMP) apparatus) includes a nozzle(so-called admizer) for injecting high-pressure washing water, and it isknown that the high-pressure washing water is injected into a polishingpad surface after completion of polishing or at the time of waterpolishing at the end of polishing (for example, refer to PatentLiterature 1). A technique of providing a suction dedicated arm beside arinse supply arm is also known (refer to Patent Literature 2).

CITATION LIST Patent Literature

-   Patent Literature 1: JP 2010-50436 A-   Patent Literature 2: US Application Publication No. 2016/0016283

SUMMARY OF INVENTION

A substrate processing apparatus of an embodiment includes: a table onwhich a polishing surface for polishing a substrate is provided; and adischarge suction section which includes a discharge port whichcommunicates with a fluid supply source and through which a fluid isdischarged to the polishing surface and a suction opening whichcommunicates with a vacuum source and through which the fluid existingon the polishing surface is sucked.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a plan view illustrating the overall structure of a substrateprocessing apparatus 100 common to the embodiments of the presenttechnique.

FIG. 2 is a schematic plan view of a first polishing unit 3A accordingto a first embodiment.

FIG. 3 is a schematic perspective view of a discharge suction section34A according to the first embodiment.

FIG. 4 is a schematic front view of an arm 90 according to the firstembodiment.

FIG. 5 is a sectional view taken along line A-A in FIG. 4.

FIG. 6 is a sectional view taken along line B-B in FIG. 4.

FIG. 7 is a sectional view taken along line C-C in FIG. 5.

FIG. 8 is a bottom view of the arm 90 according to the first embodiment.

FIG. 9 is a sectional view taken along line C-C of an arm 90-1 accordingto a first modification example of the first embodiment.

FIG. 10 is a sectional view taken along line C-C of an arm 90-2according to a second modification example of the first embodiment.

FIG. 11 is a sectional view taken along line C-C of an arm 90-3according to a third modification example of the first embodiment.

FIG. 12 is a schematic perspective view of a discharge suction section34Ab according to a second embodiment.

FIG. 13 is a schematic front view of an arm 90 b according to the secondembodiment.

FIG. 14 is a sectional view taken along line D-D in FIG. 13.

FIG. 15 is a sectional view taken along line E-E in FIG. 14.

FIG. 16 is a sectional view taken along line F-F in FIG. 15.

FIG. 17 is a bottom view of the arm 90 b according to the secondembodiment.

FIG. 18 is a schematic plan view of a first polishing unit 3A accordingto a third embodiment.

FIG. 19 is a schematic perspective view of a discharge suction section34Ac according to the third embodiment.

FIG. 20 is a schematic front view of an arm 90 c of the thirdembodiment.

FIG. 21 is a sectional view taken along line G-G in FIG. 20.

FIG. 22 is a sectional view taken along line H-H in FIG. 21.

FIG. 23 is a sectional view taken along line I-I in FIG. 22.

FIG. 24 is a bottom view of the arm 90 c according to the thirdembodiment.

FIG. 25 is a table showing pattern examples of various fluids dischargedfrom a first discharge port and a second discharge port according to thethird embodiment.

FIG. 26 is a sectional view taken along line H-H of an arm 90 c-1according to a first modification example according to the thirdembodiment.

FIG. 27 is a sectional view taken along line H-H of an arm 90 c-2according to a second modification example according to the thirdembodiment.

FIG. 28 is a sectional view taken along line H-H of an arm 90 c-3according to a third modification example according to the thirdembodiment.

FIG. 29 is a sectional view taken along line H-H of an arm 90 c-4according to a fourth modification example according to the thirdembodiment.

FIG. 30 is a sectional view taken along line H-H of an arm 90 c-5according to a fifth modification example according to the thirdembodiment.

FIG. 31 is a schematic plan view of a first polishing unit 3A accordingto a fourth embodiment.

FIG. 32 is a sectional view of an arm 90 d according to the fourthembodiment.

FIG. 33 is a table showing pattern examples of various fluids dischargedfrom a first discharge port and a second discharge port according to thefourth embodiment.

FIG. 34 is a schematic plan view of a first polishing unit 3A accordingto a fifth embodiment.

FIG. 35 is a sectional view of an arm 90 e according to the fifthembodiment.

FIG. 36 is a table showing pattern examples of various fluids dischargedfrom a discharge port according to the fifth embodiment.

FIG. 37 is a schematic plan view of the first polishing unit 3Aaccording to Modification Example 1 of a shape of the discharge suctionsection.

FIG. 38 is a schematic plan view of the first polishing unit 3Aaccording to Modification Example 2 of the shape of the dischargesuction section.

FIG. 39 is a schematic plan view of the first polishing unit 3Aaccording to Modification Example 1 in disposition of the dischargesuction section.

FIG. 40 is a schematic plan view of the first polishing unit 3Aaccording to Modification Example 2 in disposition of the dischargesuction section.

DESCRIPTION OF EMBODIMENTS

In the technique of Patent Literature 1, small dust and debris can notbe removed due to influences (boundary layer) of a water film on thepolishing pad surface. The small dust and/or debris can be removed bythe technique of Patent Literature 2. However, a moment for supporting asuction member is increased by a suction force, and thus, there is aproblem that it is difficult to maintain a gap between the suctionmember and a table.

Embodiment

It is preferable to provide a substrate processing apparatus capable ofimproving removal efficiency of dust and/or debris while maintaining thegap between the suction member and the table.

A substrate processing apparatus according to a first aspect of anembodiment includes a table on which a polishing surface for polishing asubstrate is provided, and a discharge suction section which includes adischarge port which communicates with a fluid supply source and throughwhich a fluid is discharged to the polishing surface and a suctionopening which communicates with a vacuum source and through which thefluid existing on the polishing surface is sucked.

According to this configuration, a force in a polishing surfacedirection is applied to the discharge suction section by a suctionpressure. However, the discharge suction section is supported by adischarge pressure by which the fluid is discharged, and thus, a narrowgap can be maintained between the discharge suction section and thetable. In this way, the narrow gap can be maintained, and thus, removalefficiency of dust and/or debris can be improved.

The substrate processing apparatus according to a second aspect of theembodiment is the substrate processing apparatus according to the firstaspect, wherein a gas is discharged from the discharge port, and aliquid on the polishing surface is vibrated or disturbed.

According to this configuration, a liquid film on the polishing surfaceis vibrated by a supply of the gas, the dust or the debris floats, andthe removal efficiency of small dust and/or debris can be improved.

The substrate processing apparatus according to a third aspect of theembodiment is the substrate processing apparatus according to the firstaspect, wherein the table is rotatable, the discharge port is disposedon a downstream side of the suction opening in a rotation direction ofthe table, and a liquid is supplied from the discharge port.

According to this configuration, the liquid is supplied to the polishingsurface, and thus, drying of the polishing surface can be prevented.

The substrate processing apparatus according to a fourth aspect of theembodiment is the substrate processing apparatus according to the thirdaspect, wherein the liquid discharged from the discharge port is aprocessing solution for processing a substrate.

According to this configuration, the processing solution for processingthe substrate can be supplied, and the processing solution can berenewed.

The substrate processing apparatus according to a fifth aspect of theembodiment is the substrate processing apparatus according to the firstaspect, wherein the table is rotatable, the discharge port is disposedon an upstream side of the suction opening in a rotation direction ofthe table, and a liquid is supplied from the discharge port.

According to this configuration, when the liquid film of the polishingsurface is thinned, the liquid is supplied before the suction from thesuction opening is performed, and thus, the polishing surface can beprevented from drying.

The substrate processing apparatus according to a sixth aspect of theembodiment is the substrate processing apparatus according to any one ofthe first to fifth aspects, wherein a flow path leading to the dischargeport is inclined in a direction opposite to a direction of the suctionopening.

According to this configuration, a fluid flow supplied from thedischarge port has a velocity component in a direction away from thesuction opening, and thus, the liquid on the polishing surface isextruded by a gas flow supplied from the discharge port in a directionaway from the suction opening, and a suction range can be expanded bythe suction opening.

The substrate processing apparatus according to a seventh aspect of theembodiment is the substrate processing apparatus according to any one ofthe first to sixth aspects, wherein a distance between the dischargeport and the suction opening is equal to or more than a lower limitdistance within which a range of a thin liquid film on the polishingsurface can be expanded by the fluid flow supplied from the dischargeport.

According to this configuration, the range of the thin liquid film onthe polishing surface can be expanded by the fluid flow supplied fromthe discharge port, and thus, the suction range by the suction openingexpands as much as the liquid film is thinned, and thus, the dust and/ordebris can be sucked in a wide area at one time.

The substrate processing apparatus according to an eighth aspect of theembodiment is the substrate processing apparatus according to any one ofthe first to fifth aspects, wherein a flow path leading to the dischargeport is inclined in a direction of the suction opening.

According to this configuration, the gas flow supplied from thedischarge port has the velocity component toward the suction opening,the fluid discharged from the discharge port hits the polishing surface,and thus, the dust and/or debris floats and can be extruded to thesuction opening. Accordingly, the dust and/or debris can be effectivelysucked from a suction opening S, and collection efficiency of the dustand/or debris can be improved.

The substrate processing apparatus according to a ninth aspect of theembodiment is the substrate processing apparatus according to any one ofthe first to fifth and the eighth aspects, wherein a distance betweenthe discharge port and the suction opening is equal to or less than anupper limit distance at which the polishing surface is hit by the fluiddischarged from the discharge port to cause the dust and/or debris tofloat and then the floated dust and/or debris can be sucked from thesuction opening.

According to this configuration, the polishing surface is hit by thefluid discharged from the discharge port to cause the dust and/or debristo float and then the dust and/or debris can be sucked from the adjacentsuction opening, and thus, the collection efficiency of the dust and/ordebris can be improved.

The substrate processing apparatus according to a tenth aspect of theembodiment is the substrate processing apparatus according to any one ofthe first to ninth aspects, wherein the discharge port and the suctionopening are positioned on an approximately identical plane.

According to this configuration, a levitation force from the polishingsurface generated by the discharge of the fluid and an adsorption forceto the polishing surface generated by the suction of the fluid areeasily balanced with each other, and a gap with the table is easilymaintained.

The substrate processing apparatus according to an eleventh aspect ofthe embodiment is the substrate processing apparatus according to anyone of the first to tenth aspects, wherein a plurality of the dischargeports are disposed in a radial direction of the table.

According to this configuration, forces are balanced with each other inthe radial direction of the table by the discharge pressures from thedischarge ports and the suction pressure, a posture of the dischargesuction section can be stabilized in the radial direction of the table,and a narrow gap between the discharge suction section and the table canbe stably maintained.

The substrate processing apparatus according to a twelfth aspect of theembodiment is the substrate processing apparatus according to any one ofthe first to eleventh aspects further including a polishing liquidsupply section which supplies a polishing liquid to the polishingsurface and a substrate holding section which holds the substrate,wherein the discharge suction section is disposed on a downstream sideof a polishing liquid supply nozzle in the rotation direction of thetable and is disposed on an upstream side of the substrate holdingsection in the rotation direction of the table.

According to this configuration, the discharge suction section can alsofunction as an admizer to wash away polishing debris, abrasive grain, orthe like remaining on the polishing surface by a high-pressure fluid,and thus, it is not necessary to separately provide the admizer and acost can be suppressed. That is, more preferable dressing, that is,regeneration of the polishing surface can be achieved by cleaning of thepolishing surface by a fluid pressure of the discharge suction sectionand dressing of the polishing surface by a dresser which is a mechanicalcontact.

The substrate processing apparatus according to a thirteenth aspect ofthe embodiment is the substrate processing apparatus according to anyone of the first to eleventh aspects further including a dresser forperforming dressing of the polishing surface and a polishing liquidsupply section which supplies a polishing liquid to the polishingsurface, wherein the discharge suction section is disposed on adownstream side of the dresser in the rotation direction of the tableand is disposed on an upstream side of the polishing liquid supplysection in the rotation direction of the table.

According to this configuration, dust generated by the dressing of thepolishing surface can be effectively collected. In addition, thedischarge suction section collects the dust generated by the polishingof the dressing of the polishing surface, immediately after thepolishing, and thus, diffusion of the dust can be prevented.

The substrate processing apparatus according to a fourteenth aspect ofthe embodiment is the substrate processing apparatus according to anyone of the first to eleventh aspects further including a substrateholding section which holds the substrate and a dresser for performingdressing of the polishing surface, wherein the discharge suction sectionis disposed on a downstream side of the substrate holding section in therotation direction of the table and is disposed on an upstream side ofthe dresser in the rotation direction of the table.

According to this configuration, the dust and/or debris generated bypolishing of the substrate holding section can be effectively collected.In addition, the discharge suction section collects the dust and/ordebris generated by the polishing of the substrate holding section,immediately after the polishing, and thus, diffusion of the dust and/ordebris can be prevented.

Hereafter, each embodiment will be described with reference to thedrawings. For example, a substrate processing apparatus 100 according toeach embodiment is a polishing apparatus which polishes a substrate. Ineach embodiment, a wafer will be described as an example of thesubstrate. FIG. 1 is a plan view illustrating the overall structure ofthe substrate processing apparatus 100 common to the embodiments of thepresent technique. As illustrated in FIG. 1, the substrate processingapparatus 100 includes an approximately rectangular housing 1, and theinside of the housing 1 is partitioned into a load/unload section 2, apolishing section 3, and a cleaning section 4 by partition walls 1 a and1 b. The load/unload section 2, the polishing section 3, and thecleaning section 4 are assembled separately and evacuated independently.The cleaning section 4 is partitioned into a first cleaning chamber 190,a first transfer chamber 191, a second cleaning chamber 192, a secondtransfer chamber 193, and a drying chamber 194. In addition, thesubstrate processing apparatus 100 has a controller 5 which controls asubstrate processing operation.

The load/unload section 2 includes two or more (four in the presentembodiment) front load sections 20 on which a wafer cassette whichstocks a large number of wafers (substrates) is placed. The front loadsections 20 are disposed to be adjacent to the housing 1 and arearranged along a width direction (a direction perpendicular to alongitudinal direction) of the substrate processing apparatus 100. Anopen cassette, a Standard Manufacturing Interface (SMIF) pod, or a FrontOpening Unified Pod (FOUP) can be mounted in the front load section 20.Here, the SMIF and FOUP are airtight containers which accommodate thewafer cassette inside thereof and cover the wafer cassette with apartition wall so as to hold an environment independent of an externalspace.

In addition, in the load/unload section 2, a traveling mechanism 21 islaid along a row of the front load sections 20, and a transfer robot(loader) 22 which is movable along an arrangement direction of the wafercassettes is installed on the traveling mechanism 21. The transfer robot22 moves on the traveling mechanism 21 and thus, can access the wafercassette mounted on the front load section 20. The transfer robot 22includes two hands on the upper portion and lower portion, the upperhand is used to return a processed wafer to the wafer cassette, thelower hand is used to extract the wafer before processing from the wafercassette, and thus, upper and lower hands can be used differently.Moreover, the lower hand of the transfer robot 22 rotates about an axisof the lower hand and is configured so as to be able to reverse thewafer.

The load/unload section 2 is an area where it is necessary to keep thecleanest state, and thus, the inside of the load/unload section 2 isalways maintained at a higher pressure than any of the outside of thesubstrate processing apparatus 100, the polishing section 3, and thecleaning section 4. Slurry is used as a polishing liquid in thepolishing section 3, and thus, the polishing section 3 is the dirtiestarea. Accordingly, a negative pressure is formed inside the polishingsection 3, and the pressure is maintained to be lower than an internalpressure of the cleaning section 4. A filter fan unit (not shown) havinga clean air filter such as a HEPA filter, an ULPA filter, or a chemicalfilter is provided in the load/unload section 2, and thus, clean air inwhich particles, toxic vapors, and toxic gases are removed is constantlyblown out from the filter fan unit.

The polishing section 3 is an area where polishing (planarization) ofthe wafer is performed, and includes a first polishing unit 3A, a secondpolishing unit 3B, a third polishing unit 3C, and a fourth polishingunit 3D. As illustrated in FIG. 1, the first polishing unit 3A, thesecond polishing unit 3B, the third polishing unit 3C, and the fourthpolishing unit 3D are arranged along a longitudinal direction of thesubstrate processing apparatus 100.

As illustrated in FIG. 1, the first polishing unit 3A includes a table30A to which a polishing pad 10 having the polishing surface isattached, a top ring (substrate holding section) 31A for performingpolishing while holding the wafer and pressing the wafer against thepolishing pad 10 on the table 30A, a polishing liquid supply nozzle(polishing liquid supply section) 32A for supplying a polishing liquidor a dressing liquid (for example, pure water) to the polishing pad 10,a dresser 33A for performing dressing of the polishing surface of thepolishing pad 10, and a discharge suction section 34A which injects afluid to the polishing surface and sucks the fluid existing on thepolishing surface. For example, the fluid is a gas (for example,nitrogen gas), a mixed fluid of a liquid (for example, pure water) and agas (for example, nitrogen gas), and a liquid (for example, pure water).The fluid may be a mist liquid.

Similarly, the second polishing unit 3B includes a table 30B to whichthe polishing pad 10 is attached, a top ring (substrate holding section)31B, a polishing liquid supply nozzle 32B, a dresser 33B, and adischarge suction section 34B, the third polishing unit 3C includes atable 30C to which the polishing pad 10 is attached, a top ring(substrate holding section) 31C, a polishing liquid supply nozzle 32C, adresser 33C, and a discharge suction section 34C, and the fourthpolishing unit 3D includes a table 30D to which the polishing pad 10 isattached, a top ring (substrate holding section) 31D, a polishing liquidsupply nozzle 32D, a dresser 33D, and a discharge suction section 34D.

Next, a transfer mechanism for transferring the wafer will be described.As illustrated in FIG. 1, a first linear transporter 6 is disposed to beadjacent to the first polishing unit 3A and the second polishing unit3B. The first linear transporter 6 is a mechanism which transfers thewafer between four transfer positions (a first transfer position TP1, asecond transfer position TP2, a third transfer position TP3, and afourth transfer position TP4 in order from the load/unload section side)along a direction in which the first polishing unit 3A and the secondpolishing unit 3B are arranged.

In addition, a second linear transporter 7 is disposed to be adjacent tothe third polishing unit 3C and the fourth polishing unit 3D. The secondlinear transporter 7 is a mechanism which transfers the wafer betweenthree transfer positions (a fifth transfer position TP5, a sixthtransfer position TP6, and a seventh transfer position TP7 in order fromthe load/unload section side) along a direction in which the thirdpolishing unit 3C and the fourth polishing unit 3D are arranged.

The wafer is transferred to the first polishing unit 3A and the secondpolishing unit 3B by the first linear transporter 6. As described above,the top ring 31A of the first polishing unit 3A moves between apolishing position and the second transfer position TP2 by a swingoperation of a top ring head (not shown). Accordingly, the wafer istransferred to the top ring 31A at the second transfer position TP2.Similarly, the top ring 31B of the second polishing unit 3B movesbetween the polishing position and the third transfer position TP3, andthe wafer is transferred to the top ring 31B at the third transferposition TP3. The top ring 31C of the third polishing unit 3C movesbetween the polishing position and the sixth transfer position TP6, andthe wafer is transferred to the top ring 31C at the sixth transferposition TP6. The top ring 31D of the fourth polishing unit 3D movesbetween the polishing position and the seventh transfer position TP7,and the wafer is transferred to the top ring 31D at the seventh transferposition TP7.

A lifter 11 for receiving the wafer from the transfer robot 22 isdisposed at the first transfer position TP1. The wafer is transferredfrom the transfer robot 22 to the first linear transporter 6 via thelifter 11. A shutter (not shown) positioned between the lifter 11 andthe transfer robot 22 is provided in the partition wall 1 a, and whenthe wafer is transferred, the shutter is opened, and thus, the wafer istransferred from the transfer robot 22 to the lifter 11. In addition, aswing transporter 12 is disposed between the first linear transporter 6,the second linear transporter 7, and the cleaning section 4. The swingtransporter 12 has a hand which is movable between the fourth transferposition TP4 and the fifth transfer position TP5, and the wafer istransferred from the first linear transporter 6 to the second lineartransporter 7 by the swing transporter 12. The wafer is transferred tothe third polishing unit 3C and/or the fourth polishing unit 3D by thesecond linear transporter 7. In addition, a temporary placement base 180of a wafer W installed in a frame (not shown) is disposed on a side ofthe swing transporter 12. As shown FIG. 1, the temporary placement base180 is disposed to be adjacent to the first linear transporter 6 and ispositioned between the first linear transporter 6 and the cleaningsection 4. The wafer W polished by the polishing section 3 is placed onthe temporary placement base 180 via the swing transporter 12, andthereafter, the wafer W is transferred to the cleaning section 4 by thetransfer robot of the cleaning section 4.

The first polishing unit 3A, the second polishing unit 3B, the thirdpolishing unit 3C, and the fourth polishing unit 3D have the sameconfiguration as each other, and thus, hereinafter, the first polishingunit 3A will be described.

First Embodiment

Next, disposition of elements constituting the first polishing unit 3Awill be described with reference to FIG. 2. FIG. 2 is a schematic planview of the first polishing unit 3A according to a first embodiment. Asillustrated in FIG. 2, for example, the discharge suction section 34 isdisposed on a downstream side of the polishing liquid supply nozzles 32Ain a rotation direction of the table 30A. As illustrated in FIG. 2, adischarge suction section 34A is connected to a fluid supply source FSwhich supplies a fluid and is connected to a vacuum source VS. Forexample, the fluid supplied from the fluid supply source FS is purewater (Distilled Ion Water: DIW), a chemical liquid, nitrogen gas, orthe like. For example, the vacuum source VS is an ejector or a vacuumpump.

The discharge suction section 34A is disposed on the downstream side ofthe polishing liquid supply nozzles (polishing liquid supply sections)32A in the rotation direction of the table 30A and is disposed on anupstream side of the top ring (substrate holding section) 31A in therotation direction of the table 30A. Accordingly, the discharge suctionsection 34A can function as an admizer which washes away polishingdebris, abrasive grain, or the like remaining on the polishing surfaceof the polishing pad 10 by a high-pressure fluid, and thus, it is notnecessary to separately provide the admizer and a cost can besuppressed. That is, more preferable dressing, that is, regeneration ofthe polishing surface can be achieved by cleaning of the polishingsurface by a fluid pressure of the discharge suction section 34A anddressing of the polishing surface by the dresser 33A which is amechanical contact.

FIG. 3 is a schematic perspective view of the discharge suction section34A according to the first embodiment. As illustrated in FIG. 3, thedischarge suction section 34A has an arm 90 and a support section 91which pivotably supports the arm. The arm 90 has a supply port SPconnected to the fluid supply source FS and a vacuum port VP connectedto the vacuum source VS.

FIG. 4 is a schematic front view of the arm 90 according to the firstembodiment. As illustrated in FIG. 4, the supply port SP connected tothe fluid supply source FS and the vacuum port VP connected to thevacuum source VS are provided on a front surface of the arm 90.

FIG. 5 is a sectional view taken along line A-A in FIG. 4. Asillustrated in FIG. 5, discharge ports E1, E2, E3, E4, and E5 whichcommunicate with the supply port SP and through which the fluid isdischarged to the polishing surface are provided.

FIG. 6 is a sectional view taken along line B-B in FIG. 4. Asillustrated in FIG. 6, a suction opening S which communicates with asuction port SP and through which the fluid existing on the polishingsurface is sucked is provided.

FIG. 7 is a sectional view taken along line C-C in FIG. 5. FIG. 8 is abottom view of the arm 90 according to the first embodiment. Asillustrated in FIG. 7, a gap g is provided between a lower surface ofthe arm 90 and a processing surface (upper surface) of the table 30A.The polishing surface for polishing the substrate is provided on thetable 30A. The discharge port E3 and the suction opening S arepositioned on an approximately identical plane. Accordingly, alevitation force from the polishing surface generated by the dischargeof the fluid and an adsorption force to the polishing surface generatedby the suction of the fluid are easily balanced with each other, and agap with the table 30A is easily maintained.

As illustrated in FIG. 7, the table 30A rotates in a direction of anarrow A1. As shown by an arrow A2, the fluid is discharged from thedischarge port E3, and as shown by an arrow A3, the fluid existing onthe polishing surface is sucked from the suction opening S. Accordingly,a force in a polishing surface direction is applied to the arm 90 of thedischarge suction section 34A by a suction pressure. However, the arm 90of the discharge suction section 34A is supported by a dischargepressure by which the fluid is discharged, and thus, a narrow gap can bemaintained between the arm 90 of the discharge suction section 34A andthe table 30A. In this way, the narrow gap can be maintained, and thus,removal efficiency of dust and/or debris can be improved.

For example, the gas is discharged from the discharge ports E1 to E5,and the liquid on the polishing surface is vibrated or disturbed.Accordingly, a boundary layer thickness of the polishing surface isthinned and dust floats, and thus, collection efficiency of the dust atthe suction port on the downstream side can be improved.

Alternatively, as illustrated in FIG. 7, the discharge port E3 isdisposed on the downstream side of the suction opening S in the rotationdirection of the table 30A, and the liquid may be discharged from thedischarge ports E1 to E5. Accordingly, the liquid is supplied to thepolishing surface, and thus, drying of the polishing surface (polishingpad surface) can be prevented. In this case, the liquid discharged fromthe discharge ports E1 to E5 is a processing solution. Accordingly, aprocessing solution (for example, polishing liquid) for processing thesubstrate can be supplied, and the processing solution can be renewed.

First Modification Example

FIG. 9 is a sectional view taken along line C-C of an arm 90-1 accordingto a first modification example of the first embodiment. As illustratedin FIG. 9, the table 30A rotates in a direction of an arrow A1-1. Asshown by an arrow A2-1, the fluid is discharged from the discharge portE3, and as shown by an arrow A3-1, the fluid existing on the polishingsurface is sucked from the suction opening S. As illustrated in FIG. 9,the discharge port E3 is directed in a direction opposite to thedirection of the suction opening S. That is, a flow path leading to thedischarge port E3 is inclined in the direction opposite to the directionof the suction opening S. Accordingly, the fluid flow supplied from thedischarge port E3 has a velocity component in a direction away from thesuction opening S, and thus, the liquid on the polishing surface isextruded by a gas flow supplied from the discharge port E3 in adirection away from the suction opening S, and a suction range can beexpanded by the suction opening S.

Alternatively or additionally, a distance between the discharge port E3and the suction opening S may exceed a predetermined distance.Specifically, the distance between the discharge port E3 and the suctionopening S may be equal to or more than a lower limit distance withinwhich a range of a thin liquid film on the polishing surface can beexpanded by the fluid flow supplied from the discharge port E3.According to this configuration, the range of the thin liquid film onthe polishing surface can be expanded by the fluid flow supplied fromthe discharge port E3, and thus, the suction range by the suctionopening S expands as much as the liquid film is thinned, and thus, thedust and/or debris can be sucked in a wide area at one time.

Second Modification Example

FIG. 10 is a sectional view taken along line C-C of an arm 90-2according to a second modification example of the first embodiment. Asillustrated in FIG. 10, the table 30A rotates in a direction of an arrowA1-2. As shown by an arrow A2-2, the fluid is discharged from thedischarge port E3, and as shown by an arrow A3-2, the fluid existing onthe polishing surface is sucked from the suction opening S. Asillustrated in FIG. 10, the discharge port E3 is directed in thedirection of the suction opening S. That is, the flow path leading tothe discharge port E3 is inclined in the direction of the suctionopening S. Accordingly, the gas flow supplied from the discharge port E3has the velocity component toward the suction opening S, the fluiddischarged from the discharge port E3 hits the polishing surface, andthus, the dust and/or debris floats and can be extruded to the suctionopening S. Accordingly, the dust and/or debris from the suction openingS can be effectively sucked, and collection efficiency of the dustand/or debris can be improved.

Alternatively or additionally, the distance between the discharge portE3 and the suction opening S may be less than a predetermined distance.Specifically, the distance between the discharge port E3 and the suctionopening S may be equal to or less than an upper limit distance at whichthe polishing surface is hit by the fluid discharged from the dischargeport E3 to cause the dust and/or debris to float and then the floateddust and/or debris can be sucked from the suction opening S.Accordingly, the polishing surface is hit by the fluid discharged fromthe discharge port E3 to cause the dust and/or debris to float and thenthe dust and/or debris can be sucked from the adjacent suction openingS, and thus, the collection efficiency of the dust and/or debris can beimproved.

Third Modification Example

FIG. 11 is a sectional view taken along line C-C of an arm 90-3according to a third modification example of the first embodiment. Asillustrated in FIG. 11, the table 30A rotates in a direction of an arrowA1-3. As shown by an arrow A2-3, the fluid is discharged from thedischarge port E3, and as shown by an arrow A3-3, the fluid existing onthe polishing surface is sucked from the suction opening S. Asillustrated in FIG. 11, the discharge port E3 is disposed on an upstreamside of the suction opening S in the rotation direction of the table 30Aand the liquid is discharged from the discharge port E3. Accordingly,when the liquid film of the polishing surface is thin, the liquid issupplied before the suction from the suction opening S, and thus, dryingof the polishing surface can be prevented.

Second Embodiment

Subsequently, a discharge suction section 34Ab according to a secondembodiment will be described. The discharge suction section 34Abaccording to the second embodiment is common to the discharge suctionsection 34A according to the first embodiment in that one supply port SPand one vacuum port VP are provided. Meanwhile, the discharge suctionsection 34Ab of the second embodiment and the discharge suction section34A of the first embodiment are different from each other in that twoflow paths communicating with different discharge ports with a gaptherebetween are provided in the rotation direction of the table fromthe supply port SP, two discharge ports are provided along the rotationdirection of the table, and the suction opening is disposed between thetwo discharge ports. Accordingly, forces are balanced with each other bya discharge pressure from the two discharge ports and a suctionpressure, a posture of the arm 90 b can be stabilized, and a narrow gapbetween the arm 90 b and the table 30A can be stably maintained. Inaddition, the disposition of elements constituting the first polishingunit 3A is similar to that of FIG. 2, and descriptions thereof areomitted.

FIG. 12 is a schematic perspective view of the discharge suction section34Ab according to the second embodiment. FIG. 13 is a schematic frontview of the arm 90 b according to the second embodiment. As illustratedin FIGS. 12 and 13, the supply port SP connected to the fluid supplysource FS and the vacuum port VP connected to the vacuum source VS belowthe supply port SP are provided on a front surface of the arm 90 b.

FIG. 14 is a sectional view taken along line D-D in FIG. 13. Asillustrated in FIG. 13, the suction opening S which communicates withthe suction port SP and through which the fluid existing on thepolishing surface is sucked is provided on the arm 90 b.

FIG. 15 is a sectional view taken along line E-E in FIG. 14. Asillustrated in FIG. 14, the discharges ports E1-3 and E2-3 through whichthe fluid is discharged to the polishing surface and the suction openingS through which the fluid existing on the polishing surface is suckedare provided on the arm 90 b.

As illustrated in FIG. 15, the table 30A rotates in a direction of anarrow A21. As shown in an arrow A22, the fluid is discharged from thedischarge port E1-3, and as shown by an arrow A23, the fluid isdischarged from the discharge port E2-3. In addition, as shown by anarrow A24, the fluid existing on the polishing surface is sucked fromthe suction opening S. Accordingly, a force in the polishing surfacedirection is applied to the arm 90 b of the discharge suction section34A by the suction pressure. However, the arm 90 b of the dischargesuction section 34A is supported by the discharge pressure by which thefluid is discharged, and thus, a narrow gap can be maintained betweenthe arm 90 b of the discharge suction section 34A and the table 30A. Inthis way, the narrow gap can be maintained, and thus, removal efficiencyof dust and/or debris can be improved.

FIG. 16 is a sectional view taken along line F-F in FIG. 15. Asillustrated in FIG. 15, discharge ports E2-1, E2-2, E2-3, E2-4, E2-5,and E2-6 communicate with the supply port SP.

FIG. 17 is a bottom view of the arm 90 b according to the secondembodiment. The discharge ports E1-1 to E1-5 are disposed in one rowwith gaps therebetween, and the discharge ports E2-1 to E2-5 aredisposed in one row with gaps therebetween. The suction opening S isdisposed between the row of the discharge ports E1-1 to E1-5 and the rowof the discharge ports E2-1 to E2-5.

Third Embodiment

Subsequently, a discharge suction section 34Ac according to a thirdembodiment will be described. The discharge suction section 34Ac of thethird embodiment and the discharge suction section 34A of the firstembodiment are different from each other in that two support ports areprovided, two flow paths communicating with different discharge portswith a gap therebetween are provided in the rotation direction of thetable from each supply port, two discharge ports are provided along therotation direction of the table, and the suction opening is disposedbetween the two discharge ports. Accordingly, forces are balanced witheach other by the discharge pressure from the two discharge ports andthe suction pressure, a posture of the arm 90 c can be stabilized, and anarrow gap between the arm 90 c and the table 30A can be stablymaintained.

FIG. 18 is a schematic plan view of the first polishing unit 3Aaccording to the third embodiment. Compared to the discharge suctionsection 34A according to the first embodiment, in the discharge suctionsection 34Ac according to the third embodiment, As illustrated in FIG.18, in addition to the discharge suction section 34Ac being connected tothe fluid supply source FS and the vacuum source VS, the dischargesuction section 34Ac is connected to a fluid supply source FS2.Similarly to the fluid supply source FS, for example, the fluid suppliedfrom the fluid supply source FS2 is pure water (Distilled Ion Water:DIW), a chemical liquid, nitrogen gas, or the like.

FIG. 19 is a schematic perspective view of a discharge suction section34Ac according to the third embodiment. As illustrated in FIG. 19, asupply port SP1 connected to the fluid supply source FS, a supply portSP2 connected to the fluid supply source FS2, and the vacuum port VPconnected to the vacuum source VS are provided.

FIG. 20 is a schematic front view of the arm 90 c of the thirdembodiment. As illustrated in FIG. 20, the supply port SP1 connected tothe fluid supply source FS, the supply port SP2 connected to the fluidsupply source FS2, and the vacuum port VP connected to the vacuum sourceVS are provided on a front surface of the arm 90 c.

FIG. 21 is a sectional view taken along line G-G in FIG. 20. Asillustrated in FIG. 20, the suction opening S which communicates withthe suction port SP and through which the fluid existing on thepolishing surface is sucked is provided.

FIG. 22 is a sectional view taken along line H-H in FIG. 21. Asillustrated in FIG. 22, the discharge ports E1-3 and E2-3 through whichthe fluid is discharged to the polishing surface and the suction openingS through which the fluid existing on the polishing surface is suckedare provided on the arm 90 c.

As illustrated in FIG. 22, the table 30A rotates in a direction of anarrow A31. As shown by an arrow A32, the fluid is discharged from thedischarge port E1-3, and as shown by an arrow A33, the fluid isdischarged from the discharge port E2-3. In addition, as shown by anarrow A34, the fluid existing on the polishing surface is sucked fromthe suction opening S. Accordingly, a force in the polishing surfacedirection is applied to the arm 90 c of the discharge suction section34A by the suction pressure. However, the arm 90 c of the dischargesuction section 34A is supported by the discharge pressure by which thefluid is discharged, and thus, a narrow gap can be maintained betweenthe arm 90 c of the discharge suction section 34A and the table 30A. Inthis way, the narrow gap can be maintained, and thus, removal efficiencyof dust and/or debris can be improved.

FIG. 23 is a sectional view taken along line I-I in FIG. 22. Asillustrated in FIG. 23, the discharge ports E2-1, E2-2, E2-3, E2-4,E2-5, and E2-6 communicate with the supply port SP2.

FIG. 24 is a bottom view of the arm 90 c according to the thirdembodiment. The discharge ports E1-1 to E1-6 are disposed in one rowwith gaps therebetween, and the discharge ports E2-1 to E2-6 aredisposed in one row with gaps therebetween. The suction opening S isdisposed between the row of the discharge ports E1-1 to E1-6 and the rowof the discharge ports E2-1 to E2-6.

In this way, a plurality of (two in the example of FIG. 22) dischargeports are provided along the rotation direction (a short axis directionof the arm 90 c) of the table 30A, and the suction opening S is disposedbetween the plurality of discharge ports. Accordingly, forces arebalanced with each other by the discharge pressure from the plurality ofdischarge ports and the suction pressure, a posture of the arm 90 c canbe stabilized, and a narrow gap between the arm 90 c and the table 30Acan be stably maintained.

For example, in the present embodiment, the plurality of discharge portsinclude the discharge ports E1-1 to E1-6 (referred to as first dischargeports) and the discharge ports E2-1 to E2-6 (referred to as seconddischarge ports), and the suction opening S is disposed between thedischarge ports E1-1 to E1-6 and the discharge ports E2-1 to E2-6.

In addition, in the present embodiment, for example, the plurality ofdischarge ports are disposed along a radial direction (a long axisdirection of the arm 90 c) of the table 30A. Accordingly, forces arebalanced with each other in the radial direction of the table 30A by thedischarge pressure from the discharge ports and the suction pressure, aposture of the arm 90 c can be stabilized in the radial direction of thetable 30A, and a narrow gap between the arm 90 c and the table 30A canbe stably maintained.

FIG. 25 is a table showing pattern examples of various fluids dischargedfrom a first discharge port and a second discharge port according to thethird embodiment. Hereinafter, the first discharge port E1-3 as arepresentative of the first discharge ports E1-1 to E1-6 and the seconddischarge port E2-3 as a representative of the second discharge portsE2-1 to E2-6 will be described.

In a first pattern of FIG. 25, the pure water (DIW) is discharged fromthe first discharge port E1-3 of FIG. 22, and the pure water (DIW) isdischarged from the second discharge port E2-3 of FIG. 22. Accordingly,the suction force from the suction opening S and the discharge forces ofthe first discharge ports E1-1 to E1-6 and the second discharge portsE2-1 to E2-6 are balanced, the posture of the arm 90 c can bestabilized, and a narrow gap between the arm 90 c and the table 30A canbe stably maintained. In addition, even when the fluid existing on thepolishing surface is sucked from the suction opening S, the pure water(DIW) is supplied from the second discharge ports E2-1 to E2-6positioned on the downstream in the rotation direction of the table 30A,and thus, wetting of the polishing surface can be maintained.

In a second pattern of FIG. 25, the pure water (Distilled Ion Water:DIW) is discharged from the first discharge port E1-3 of FIG. 22, andthe processing solution (for example, polishing liquid) for processingthe substrate is discharged from the second discharge port E2-3 of FIG.22. Here, as described above, the second discharge port E2-3 is disposedon the downstream side of the suction opening S in the rotationdirection of the table 30A. Accordingly, the processing solution (forexample, polishing liquid) is discharged to the polishing surface fromwhich the fluid is sucked by the suction from the suction opening S, andthus, a new processing solution (for example, the polishing liquid) canbe replaced.

In a third pattern of FIG. 25, a gas is discharged from the firstdischarge port E1-3 of FIG. 22 and a gas is discharged from the seconddischarge port E2-3 of FIG. 22. Accordingly, the boundary layerthickness of the polishing surface is thinned by the discharged gas, theliquid film is vibrated and/or disturbed to cause the dust and/or debristo float, and thus, collection efficiency of the dust and/or debris inthe suction opening S on the downstream side in the rotation directionof the table 30A can be improved. Moreover, the suction force from thesuction opening S and the discharge pressure of the gas of the firstdischarge port E1-3 and the second discharge port E2-3 are balanced, andthus, the posture of the arm 90 c can be stabilized, and a narrow gapbetween the arm 90 c and the table 30A can be stably maintained.

In a fourth pattern of FIG. 25, the pure water (DIW) is discharged fromthe first discharge port E1-3 of FIG. 22, and the gas is discharged fromthe second discharge port E2-3 of FIG. 22. As described above, the firstdischarge port E1-3 is disposed on the upstream side of the suctionopening S in the rotation direction of the table 30A. Accordingly, whenthe liquid film of the polishing surface is thinned, the liquid film ofthe polishing surface can be thickened by discharging the pure water(DIW) from the first discharge port E1-3, and thus, the polishingsurface from drying due to the suction of the suction opening S can beprevented. In addition, the boundary layer thickness of the polishingsurface is thinned by the gas discharged from the second discharge portE2-3, the liquid film is vibrated and/or disturbed to cause the dustand/or debris to float, and thus, collection efficiency of the dustand/or debris in the suction opening S can be improved.

In a fifth pattern of FIG. 25, the gas is discharged from the firstdischarge port E1-3 of FIG. 22, and the pure water (DIW) is dischargedfrom the second discharge port E2-3 of FIG. 22. As described above, thefirst discharge port E1-3 is disposed on the upstream side of thesuction opening S in the rotation direction of the table 30A.Accordingly, the boundary layer thickness of the polishing surface isthinned by the gas discharged from the first discharge port E1-3, theliquid film is vibrated and/or disturbed to cause the dust and/or debristo float, and thus, collection efficiency of the dust and/or debris inthe suction opening S can be improved. In addition, the pure water isdischarged from the second discharge port E2-3, and thus, the fluid onthe polishing surface can be replaced with new pure water.

First Modification Example

FIG. 26 is a sectional view taken along line H-H of an arm 90 c-1according to a first modification example according to the thirdembodiment. As illustrated in FIG. 26, the table 30A rotates in adirection of an arrow A41. As shown by an arrow A42, the fluid isdischarged from the discharge port E1-3, and as shown by an arrow A43,the fluid is discharged from the discharge port E2-3. In addition, asshown by an arrow A44, the fluid existing on the polishing surface issucked from the suction opening S. Accordingly, a force in the polishingsurface direction is applied to the arm 90 c-1 of the discharge suctionsection 34A by the suction pressure. However, the arm 90 c-1 of thedischarge suction section 34A is supported by the discharge pressure bywhich the fluid is discharged, and thus, a narrow gap can be maintainedbetween the arm 90 c-1 of the discharge suction section 34A and thetable 30A. In this way, the narrow gap can be maintained, and thus, theremoval efficiency of the dust and/or debris can be improved.

In addition, As illustrated in FIG. 26, the first discharge port E1-3 isdirected in a direction opposite to the direction of the suction openingS, and the second discharge port E2-3 is directed in a directionopposite to the direction of the suction opening S. That is, a flow pathleading to the first discharge port E1-3 is inclined in the directionopposite to the direction of the suction opening S, and is inclined inthe direction opposite to the direction of the suction opening S. Inaddition, from another viewpoint, the first discharge port E1-3 isdisposed on the upstream side of the second discharge port E2-3 in therotation direction of the table 30A, the first discharge port E1-3 isdirected in a direction opposite to the rotation direction of the table30A, and the second discharge port E2-3 is directed in the forwarddirection of the rotation direction of the table 30A.

Accordingly, the fluid (for example, pure water and gas) discharged fromthe first discharge port E1-3 and the second discharge port E2-3 has avelocity component in the direction away from the suction opening S, andthus, the fluid on the polishing surface is extruded by the fluid in adirection away from the suction opening S, and a suction range from thesuction opening S can be expanded.

For example, in a case where the pure water is discharged from the firstdischarge port E1-3, a horizontal velocity component of the pure waterdischarged from the first discharge port E1-3 is in a direction againstthe rotation direction of the table 30A, and thus, extrusion effects ofthe liquid on the polishing surface by the pure water can be improved,and thus, the suction range from the suction opening S can be expanded.

Similarly, for example, in a case where the gas (for example, nitrogengas) is discharged from the first discharge port E1-3 and the seconddischarge port E2-3, the gas discharged from the first discharge portE1-3 and the second discharge port E2-3 has a velocity component in thedirection away from the suction opening S, and thus, the fluid on thepolishing surface is extruded by the gas flow in a direction away fromthe suction opening S, and a suction range from the suction opening Scan be expanded.

In addition, in the first modification example, both the first dischargeport E1-3 and the second discharge port E2-3 are directed in thedirection opposite to the direction of the suction opening S. However,the present invention is not limited to this. Only the first dischargeport E1-3 may be directed in the direction opposite to the direction ofthe suction opening S, or only the second discharge port E2-3 may bedirected in the direction opposite to the direction of the suctionopening S. That is, only the flow path leading to the first dischargeport E1-3 may be inclined in the direction opposite to the direction ofthe suction opening S, or only the flow path leading to the seconddischarge port E2-3 may be inclined in the direction opposite to thedirection of the suction opening S. In this way, at least one of thefirst discharge port E1-3 and the second discharge port E2-3 may bedirected in the direction opposite to the direction of the suctionopening S. That is, the flow path leading to at least one of the firstdischarge port E1-3 and the second discharge port E2-3 may be inclinedin the direction opposite to the direction of the suction opening S.Accordingly, the gas flow discharged from the first discharge port E1-3and/or the second discharge port E2-3 has a velocity component in thedirection away from the suction opening S, and thus, the fluid on thepolishing surface is extruded by the gas flow in a direction away fromthe suction opening S, and a suction range from the suction opening Scan be expanded.

In addition, alternatively or additionally, a distance between the firstdischarge port E1-3 and/or the second discharge port E2-3, and thesuction opening S may exceed a predetermined distance. The distancebetween the first discharge port E1-3 and/or the second discharge portE2-3, and the suction opening S may be equal to or more than a lowerlimit distance within which a range of a thin liquid film on thepolishing surface can be expanded by the fluid flow supplied from thefirst discharge port E1-3 and/or the second discharge port E2-3.Accordingly, the fluid on the polishing surface is extruded to theoutside from the first discharge port E1-3 and/or the second dischargeport E2-3 by the gas flow, and thus, the suction range from the suctionopening S can be expanded.

Second Modification Example

FIG. 27 is a sectional view taken along line H-H of an arm 90 c-2according to a second modification example according to the thirdembodiment. As illustrated in FIG. 27, the table 30A rotates in adirection of an arrow A51. As shown by an arrow A52, the fluid isdischarged from the discharge port E1-3, and as shown by an arrow A53,the fluid is discharged from the discharge port E2-3. In addition, asshown by an arrow A54, the fluid existing on the polishing surface issucked from the suction opening S. Accordingly, a force in the polishingsurface direction is applied to the arm 90 c-2 of the discharge suctionsection 34A by the suction pressure. However, the arm 90 c-2 of thedischarge suction section 34A is supported by the discharge pressure bywhich the fluid is discharged, and thus, a narrow gap can be maintainedbetween the arm 90 c-2 of the discharge suction section 34A and thetable 30A. In this way, the narrow gap can be maintained, and thus, theremoval efficiency of the dust and/or debris can be improved.

As illustrated in FIG. 27, in the second modification example, thedistance between the first discharge port E1-3 and the second dischargeport E2-3, and the suction opening S is shorter than that of FIG. 22 andis less than the predetermined distance. Specifically, the distancebetween the first discharge port E1-3 and the second discharge portE2-3, and the suction opening S may be equal to or less than an upperlimit distance at which the polishing surface is hit by the fluiddischarged from the first discharge port E1-3 and the second dischargeport E2-3 to cause the dust and/or debris to float and then the floateddust and/or debris can be sucked from the suction opening S.Accordingly, in the immediate vicinity of the suction opening S, thefluid (for example, pure water and gas) discharged from the firstdischarge port E1-3 and the second discharge port E2-3 vibrates ordisturbs the liquid on the polishing surface to cause the dust and/ordebris to float, and then the floated the dust and/or debris is suckedfrom the suction opening S, and thus, the collection efficiency of thedust and/or debris can be improved.

In addition, As illustrated in FIG. 27, the first discharge port E1-3and the second discharge port E2-3 are directed in the direction of thesuction opening S. That is, the flow paths leading to the firstdischarge port E1-3 and the second discharge port E2-3 are inclined inthe direction of the suction opening S. Accordingly, the fluid (forexample, the pure water and the gas) discharged from the first dischargeport E1-3 and the second discharge port E2-3 has the velocity componentin the direction of the suction opening S, and thus, the fluid vibratesand/or disturbs the liquid film on the polishing surface to cause thedust and/or debris to float, the dust and/or debris are carried in thedirection of the suction opening S, and the collection efficiency of thedust and/or debris in the suction opening S can be improved.

Moreover, in the second modification example, both the distance betweenthe first discharge port E1-3 and the suction opening S and the distancebetween the second discharge port E2-3 and the suction opening S areless than the predetermined distance. However, the present invention isnot limited to this, only the distance between first discharge port E1-3and the suction opening S may be less than the predetermined distance,or only the distance between the second discharge port E2-3 and thesuction opening S may be less than the predetermined distance.Specifically, only the distance between the first discharge port E1-3and the suction opening S may be equal to or less than the upper limitdistance at which the polishing surface is hit by the fluid dischargedfrom the first discharge port E1-3 to cause the dust and/or debris tofloat and the floated dust and/or debris can be sucked from the suctionopening S. Alternatively, only the distance between the second dischargeport E2-3 and the suction opening S may be equal to or less than theupper limit distance at which the polishing surface is hit by the fluiddischarged from the second discharge port E2-3 to cause the dust and/ordebris to float and then the floated dust and/or debris can be suckedfrom the suction opening S. In this way, the distance between the firstdischarge port E1-3 and/or the second discharge port E2-3 and thesuction opening S may be less than the predetermined distance. That is,the distance between the first discharge port E1-3 and/or the seconddischarge port E2-3 and the suction opening S may be equal to or lessthan the upper limit distance at which the polishing surface is hit bythe fluid discharged from the first discharge port E1-3 and/or thesecond discharge port E2-3 to cause the dust and/or debris to float andthen the floated dust and/or debris can be sucked from the suctionopening S. Accordingly, in the immediate vicinity of the suction openingS, the fluid (for example, pure water and gas) discharged from the firstdischarge port E1-3 and/or the second discharge port E2-3 vibrates ordisturbs the liquid on the polishing surface to cause the dust and/ordebris to float, the floated dust and/or debris is sucked from thesuction opening S, and thus, the collection efficiency of the dustand/or debris can be improved.

In addition, in the second modification example, both the firstdischarge port E1-3 and the second discharge port E2-3 are directed inthe direction of the suction opening S. However, the present inventionis not limited to this, only the first discharge portion E1-3 may bedirected in the direction of the suction opening S or only the seconddischarge portion E2-3 may be directed in the direction of the suctionopening S. That is, only the flow path leading to the first dischargeport E1-3 may be inclined in the direction of the suction opening S, oronly the flow path leading to the second discharge portion E2-3 may beinclined in the direction of the suction opening S. In this way, atleast one of the first discharge port E1-3 and the second discharge portE2-3 may be directed in the direction of the suction opening S. That is,the flow path leading to at least one of the first discharge port E1-3and the second discharge port E2-3 may be inclined in the direction ofthe suction opening S. Accordingly, the fluid (for example, the purewater and the gas) discharged from the first discharge port E1-3 and/orthe second discharge port E2-3 has the velocity component in thedirection of the suction opening S, and thus, the fluid vibrates and/ordisturbs the liquid film on the polishing surface to cause the dustand/or debris to float, the dust and/or debris are carried in thedirection of the suction opening S, and the collection efficiency of thedust and/or debris in the suction opening S can be improved.

Third Modification Example

FIG. 28 is a sectional view taken along line H-H of an arm 90 c-3according to a third modification example according to the thirdembodiment. As illustrated in FIG. 28, the table 30A rotates in adirection of an arrow A61. For example, the fluid supply source FS is asupply source of the liquid (for example, pure water), and the dischargeport E1-3 and the discharge port E4-3 communicate with the fluid supplysource FS. Accordingly, as shown by an arrow A62, a liquid L1 isdischarged from the discharge port E1-3, and as shown by an arrow A63, aliquid L2 is discharged from the discharge port E4-3.

For example, the fluid supply source FS2 is a supply source of a gas(for example, nitrogen gas), and the discharge port E2-3 and thedischarge port E3-3 communicate with the fluid supply source FS2.Accordingly, as shown by an arrow A64, a gas G1 is discharged from thedischarge port E2-3, and as shown by an arrow A65, a gas G2 isdischarged from the discharge port E3-3. In addition, the suctionopening S communicates with the vacuum source VS, and as shown by anarrow A66, the fluid existing on the polishing surface is sucked fromthe suction opening S. Accordingly, a force in the polishing surfacedirection is applied to the arm 90 c-3 of the discharge suction section34A by the suction pressure. However, the arm 90 c-3 of the dischargesuction section 34A is supported by the discharge pressure by which thefluid is discharged, and thus, a narrow gap can be maintained betweenthe arm 90 c-3 of the discharge suction section 34A and the table 30A.In this way, the narrow gap can be maintained, and thus, the removalefficiency of the dust and/or debris can be improved.

For example, in a case where the liquid film having a predeterminedthickness exists on the polishing surface, the liquid is not dischargedfrom the discharge port E1-3 and the discharge port E4-3, whereas in acase where the liquid film having a predetermined thickness exists onthe polishing surface, the liquid may be discharged from the dischargeport E1-3 and the discharge port E4-3.

Fourth Modification Example

FIG. 29 is a sectional view taken along line H-H of an arm 90 c-4according to a fourth modification example according to the thirdembodiment. As illustrated in FIG. 29, the table 30A rotates in adirection of an arrow A71. For example, the fluid supply source FS is asupply source of the liquid (for example, pure water), and the dischargeport E1-3 and the discharge port E3-3 communicate with the fluid supplysource FS. Accordingly, as shown by an arrow A72, the liquid L1 isdischarged from the discharge port E1-3, and as shown by an arrow A73,the liquid L2 is discharged from the discharge port E3-3.

For example, the fluid supply source FS2 is a supply source of a gas(for example, nitrogen gas), and the discharge port E2-3 communicateswith the fluid supply source FS2. Accordingly, as shown by an arrow A74,the gas G1 is discharged from the discharge port E2-3. In addition, thesuction opening S communicates with the vacuum source VS, and as shownby an arrow A75, the fluid existing on the polishing surface is suckedfrom the suction opening S. Accordingly, a force in the polishingsurface direction is applied to the arm 90 c-4 of the discharge suctionsection 34A by the suction pressure. However, the arm 90 c-4 of thedischarge suction section 34A is supported by the discharge pressure bywhich the fluid is discharged, and thus, a narrow gap can be maintainedbetween the arm 90 c-4 of the discharge suction section 34A and thetable 30A. In this way, the narrow gap can be maintained, and thus, theremoval efficiency of the dust and/or debris can be improved. Moreover,the liquid L2 is discharged from the discharge port E3-3, and thus,drying of the polishing surface is prevented, and the posture of the arm90 c-4 can be stabilized by the discharge pressure of the liquid L2. Inaddition, the gas G1 discharged from the second discharge port E2-3vibrates or disturbs the liquid on the polishing surface to cause thedust and/or debris to float, the floated dust and/or debris is suckedfrom the suction opening S, and thus, the collection efficiency of thedust and/or debris can be improved.

Fifth Modification Example

FIG. 30 is a sectional view taken along line H-H of an arm 90 c-5according to a fifth modification example according to the thirdembodiment. As illustrated in FIG. 30, the table 30A rotates in adirection of an arrow A81. For example, the fluid supply source FS is asupply source of the liquid (for example, pure water), and the dischargeport E1-3 communicates with the fluid supply source FS. Accordingly, asshown by an arrow A82, the liquid L1 is discharged from the dischargeport E1-3.

For example, the fluid supply source FS2 is a supply source of a gas(for example, nitrogen gas), and the discharge port E2-3 and thedischarge port E3-3 communicate with the fluid supply source FS2.Accordingly, as shown by an arrow A83, the gas G1 is discharged from thedischarge port E2-3, and as shown by an arrow A84, the gas G2 isdischarged from the discharge port E3-3. In addition, the suctionopening S communicates with the vacuum source VS, and as shown by anarrow A85, the fluid existing on the polishing surface is sucked fromthe suction opening S. Accordingly, a force in the polishing surfacedirection is applied to the arm 90 c-5 of the discharge suction section34A by the suction pressure. However, the arm 90 c-5 of the dischargesuction section 34A is supported by the discharge pressure by which thefluid is discharged, and thus, a narrow gap can be maintained betweenthe arm 90 c-5 of the discharge suction section 34A and the table 30A.In this way, the narrow gap can be maintained, and thus, the removalefficiency of the dust and/or debris can be improved. Moreover, theliquid L2 is discharged from the discharge port E3-3, and thus, theposture of the arm 90 c-5 can be stabilized by the discharge pressure ofthe gas G2. In addition, the gas G1 discharged from the second dischargeport E2-3 vibrates or disturbs the liquid on the polishing surface tocause the dust and/or debris to float, the floated dust and/or debris issucked from the suction opening S, and thus, the collection efficiencyof the dust and/or debris can be improved.

In addition, in the third embodiment and the respective modificationexamples of the third embodiment, one suction opening S is provided.However, the present invention is not limited to this, a plurality ofsuction openings S may be provided, and for example, a plurality ofsuction openings S may be provided continuously.

Fourth Embodiment

Subsequently, a discharge suction section 34Ad according to a fourthembodiment will be described. The discharge suction section 34Adaccording to the fourth embodiment is different from the dischargesuction section 34Ac according to the third embodiment in that two inletports are provided in order in the rotation direction of the table andthe inlet port is provided on the most downstream side in the rotationdirection of the table.

FIG. 31 is a schematic plan view of the first polishing unit 3Aaccording to the fourth embodiment. As illustrated in FIG. 31, adischarge suction section 34Ad is connected to the fluid supply sourceFS, is connected to the fluid supply source FS2, and is connected to thevacuum source VS.

FIG. 32 is a sectional view of an arm 90 d according to the fourthembodiment. FIG. 32 is a sectional view corresponding to the H-H crosssection of FIG. 22. As illustrated in FIG. 32, in the presentembodiment, for example, the suction opening S is positioned on thedownstream sides of the first discharge port E1-3 and the seconddischarge port E2-3 in the rotation direction of the table 30A.

As illustrated in FIG. 32, the table 30A rotates in a direction of anarrow A91. As shown by an arrow A92, the fluid is discharged from thedischarge port E1-3, and as shown by an arrow A93, the fluid isdischarged from the discharge port E2-3. In addition, as shown by anarrow A94, the fluid existing on the polishing surface is sucked fromthe suction opening S. In addition, similarly to the arm 90 c accordingto the third embodiment, in the arm 90 d according to the fourthembodiment, the first discharge ports E1-1 to E1-6 are disposed in thelong axis direction with gaps therebetween, and the second dischargeports E2-1 to E2-6 are disposed in the longitudinal direction with gapstherebetween.

FIG. 33 is a table showing pattern examples of various fluids dischargedfrom the first discharge port and the second discharge port according tothe fourth embodiment. Hereinafter, the first discharge port E1-3 as arepresentative of the first discharge ports E1-1 to E1-6 and the seconddischarge port E2-3 as a representative of the second discharge portsE2-1 to E2-6 will be described.

In a first pattern of FIG. 33, the pure water (Distilled Ion Water: DIW)is discharged from the first discharge port E1-3 of FIG. 32, and the gasis discharged from the second discharge port E2-3 of FIG. 32.

Accordingly, when the liquid film on the polishing surface is thinned,the pure water is discharged from the first discharge port E1-3, andthus, drying of the polishing surface can be prevented, and the gapbetween the arm 90 d and the table 30A can be maintained by thedischarge pressure. In addition, the supplied pure water is vibratedand/or disturbed by the gas discharged from the second discharge portE2-3 to cause the dust and/or debris to float, and thus, the collectionefficiency of the dust and/or debris in the suction opening S positionedon the downstream side in the rotation direction of the table 30A can beimproved.

In a second pattern of FIG. 33, the gas is discharged from the firstdischarge port E1-3 of FIG. 32, and the pure water (Distilled Ion Water:DIW) is discharged from the second discharge port E2-3 of FIG. 32.Accordingly, even in a case where the liquid film exists on thepolishing surface and the dust and/or debris are not easily sucked dueto influences of the film thickness, vibration and/or disturbance aregenerated by the gas discharged from the first discharge port E1-3, andthus, the dust and/or debris can float. In addition, new pure water isadded to the vibrated and/or disturbed liquid film, buoyancy is appliedto the dust and/or debris, and thus, the suction can be easily performedthrough the suction opening S. As a result, the collection efficiency ofthe dust and/or debris in the suction opening S can be improved.

In addition, the second discharge port E2-3 may be the inlet port.

Moreover, in the present embodiment, for example, the suction opening Sis disposed on the downstream side of the first discharge port E1-3 andthe second discharge port E2-3 in the rotation direction of the table30A. However, the present invention is not limited to this, and thesuction opening S may be disposed on the upstream side of the firstdischarge port E1-3 and the second discharge port E2-3 in the rotationdirection of the table 30A. In addition, the present invention is notlimited to the case where the two discharge ports are disposed along therotation direction of the table 30A. That is, three or more dischargeports may be disposed. In this way, the plurality of discharge ports maybe provided, and the suction opening may be disposed outside theplurality of discharge ports.

In addition, one suction opening S is provided. However, the presentinvention is not limited to this, a plurality of suction openings S maybe provided, and for example, a plurality of suction openings S may beprovided continuously.

Fifth Embodiment

Subsequently, a discharge suction section 34Ae according to a fifthembodiment will be described. The discharge suction section 34Aeaccording to the fifth embodiment is different from the dischargesuction section 34Ac according to the third embodiment in that twosuction openings are provided, and the discharge port is providedbetween the two suction openings.

FIG. 34 is a schematic plan view of a first polishing unit 3A accordingto the fifth embodiment. As illustrated in FIG. 34, the dischargesuction section 34Ae is connected to the fluid supply source FS and isconnected to the vacuum source VS and a vacuum source VS2.

FIG. 35 is a sectional view of an arm 90 e according to the fifthembodiment. FIG. 35 is a sectional view corresponding to the H-H crosssection of FIG. 22. In the present embodiment, as illustrated in FIG.35, for example, the discharge port E1-3 is provided between the firstsuction opening S1 and the second suction opening S2. The first suctionopening S1 communicates with the vacuum source VS and the second suctionopening S1 communicates with the vacuum source VS2.

As illustrated in FIG. 35, the table 30A rotates in a direction of anarrow A101. As shown by an arrow A102, the fluid existing on thepolishing surface is sucked from the first suction opening S1. As shownby an arrow A103, the fluid is discharged from the discharge port E1-3.As shown by an arrow A104, the fluid existing on the polishing surfaceis sucked from the second suction opening S2. Accordingly, a force inthe polishing surface direction is applied to the arm 90 e of thedischarge suction section 34A by the suction pressure. However, the arm90 e of the discharge suction section 34A is supported by the dischargepressure by which the fluid is discharged, and thus, a narrow gap can bemaintained between the arm 90 e of the discharge suction section 34A andthe table 30A. In this way, the narrow gap can be maintained, and thus,removal efficiency of dust and/or debris can be improved.

In addition, similarly to the arm 90 c according to the thirdembodiment, in the arm 90 e according to the fifth embodiment, thedischarge ports E1-1 to E1-6 are disposed in the long axis directionwith gaps therebetween.

FIG. 36 is a table showing pattern examples of various fluids dischargedfrom the discharge port according to the fifth embodiment. Hereinafter,the discharge port E1-3 as a representative of the discharge ports E1-1to E1-6 will be described. In a first pattern of FIG. 36, the pure water(Distilled Ion Water: DIW) is discharged from the first discharge portE1-3 of FIG. 35.

Accordingly, even in a case where the liquid film on the polishingsurface is thick, after the liquid is sucked from the first suctionopening S1 once, the dust and/or debris is floated by the pure waterdischarged from the first discharge port E1-3, and the floated dustand/or debris can be floated by the second suction opening S2 so as tobe sucked. Accordingly, the collection efficiency of the dust and/ordebris can be improved.

In a second pattern of FIG. 36, the gas is discharged from the firstdischarge port E1-3 of FIG. 35. Accordingly, even in a case where theliquid film on the polishing surface is thick, after the liquid issucked from the first suction opening S1 once, the dust and/or debris isvibrated and/or disturbed by the gas discharged from the first dischargeport E1-3 so as to be floated, and the floated dust and/or debris can befloated by the second suction opening S2 so as to be sucked.Accordingly, the collection efficiency of the dust and/or debris can beimproved.

In addition, for example, in the present embodiment, two suctionopenings are provided. However, three or more suction openings may beprovided. In this way, the plurality of suction openings may beprovided, and the discharge port may be provided between the pluralityof suction openings. Accordingly, even in a case where the liquid filmon the polishing surface is thick, after the liquid is sucked from thefirst suction opening S1 once, the dust and/or debris is floated by thefluid discharged from the first discharge port E1-3, and the floateddust and/or debris can be floated by the second suction opening S2 so asto be sucked. Accordingly, the collection efficiency of the dust and/ordebris can be improved.

Subsequently, modification examples of shapes and disposition of thedischarge suction sections according to the first to fifth embodimentswill be described. Hereinafter, the modification example of the shapesand the disposition of the discharge suction section 34A will bedescribed as a representative of the discharge suction section 34Aaccording to the first embodiment. However, the other embodiments can besimilarly applied.

Modification Example 1 of Shape

FIG. 37 is a schematic plan view of the first polishing unit 3Aaccording to Modification Example 1 of the shape of the dischargesuction section. As illustrated in FIG. 37, a width of the dischargesuction section 34 may increase in the rotation direction of the table30A such that a width of the suction opening is widened in the rotationdirection of the table 30A. Accordingly, collection efficiency of thedust and/or debris can be improved.

Modification Example 2 of Shape

FIG. 38 is a schematic plan view of the first polishing unit 3Aaccording to Modification Example 2 of the shape of the dischargesuction section. As illustrated in FIG. 38, the discharge suctionsection 34 has a fan shape when viewed from above and has a shape whichis widened toward a radially outer side of the table 30A. In addition,an arc of the discharge suction section 34 has a width proportional to aradius (or a length of an outer periphery) of the table 30A or thepolishing pad. Accordingly, the dust and/or debris moved toward theouter peripheral side by a centrifugal force can be effectivelycollected, and thus, collection efficiency of the dust and/or debris canbe improved.

Modification Example 1 of Disposition

FIG. 39 is a schematic plan view of the first polishing unit 3Aaccording to Modification Example 1 in disposition of the dischargesuction section. As illustrated in FIG. 39, the substrate processingapparatus 100 includes an atomizer 35A in addition to the dischargesuction section 34A. The atomizer 35A injects a mixed fluid of theliquid (for example, pure water) and the gas (for example, nitrogengas), or the liquid (for example, pure water) in the form of a mist tothe polishing surface. The discharge suction section 34A is disposed onthe downstream side of the dresser 33A in the rotation direction of thetable 30A, and is disposed on the upstream side of the polishing liquidsupply nozzle 32A in the rotation direction of the table 30A.Accordingly, dust generated by the dressing of the polishing surface canbe effectively collected. In addition, the discharge suction section 34Acollects the dust generated by the polishing of the dressing of thepolishing surface, immediately after the polishing, and thus, diffusionof the dust can be prevented.

Modification Example 2 of Disposition

FIG. 40 is a schematic plan view of the first polishing unit 3Aaccording to Modification Example 2 in disposition of the dischargesuction section. As illustrated in FIG. 40, as illustrated in FIG. 40,the substrate processing apparatus 100 includes the atomizer 35A inaddition to the discharge suction section 34A. The atomizer 35A injectsa mixed fluid of the liquid (for example, pure water) and the gas (forexample, nitrogen gas), or the liquid (for example, pure water) in theform of a mist to the polishing surface. The discharge suction section34A is disposed on the downstream side of the top ring 31A in therotation direction of the table 30A, and is disposed on the upstreamside of the dresser 33A in the rotation direction of the table 30A.Accordingly, the dust and/or debris generated by the polishing of thetop ring 31A can be effectively collected. In addition, the dischargesuction section 34A collects the dust and/or debris generated by thepolishing of the top ring 31A, immediately after the polishing, andthus, diffusion of the dust and/or debris can be prevented.

In addition, the arm may be disposed on the upstream side (preferably,near the upstream side) of the top ring in the rotation direction of thetable. Accordingly, if the polishing liquid (slurry) is supplied fromthe discharge port of the arm, the supply of the slurry to the wafer Wcan be arbitrarily controlled, and thus, polishing performance can beimproved.

As described above, the present technique is not limited to the aboveembodiments as it is, and constituent elements can be modified andembodied in the implementation stage without departing from the gist ofthe present technique. Furthermore, various techniques can be formed byappropriately combining a plurality of constituent elements disclosed inthe above embodiments. For example, some constituent elements may bedeleted from all the constituent elements illustrated in theembodiments. Moreover, the constituent elements across differentembodiments may be appropriately combined.

REFERENCE SIGNS LIST

-   1 housing-   2 load/unload section-   3 polishing section-   3A, 3B, 3C, 3D polishing unit-   4 cleaning section-   5 controller-   6 first linear transporter-   7 second linear transporter-   10 polishing pad-   10 a polishing surface-   11 lifter-   12 swing transporter-   20 front load section-   21 traveling mechanism-   22 transfer robot-   30A, 30B, 30C, 30D table-   31A, 31B, 31C, 31D top ring (substrate holding section)-   32A, 32B, 32C, 32D polishing liquid supply nozzle-   33A, 33B, 33C, 33D dresser-   34A, 34Ab, 34Ac, 34Ad, 34Ae, 34B, 34C, 34D discharge-   suction section-   35A atomizer-   90, 90 b, 90 c, 90 d, 90 e arm-   91 support section-   SP supply port-   VP vacuum port-   FS, FS2 fluid supply source-   VS, VS2 vacuum source

1. A substrate processing apparatus comprising: a table on which apolishing surface for polishing a substrate is provided; and a dischargesuction section which includes a discharge port which communicates witha fluid supply source and through which a fluid is discharged to thepolishing surface and a suction opening which communicates with a vacuumsource and through which the fluid existing on the polishing surface issucked.
 2. The substrate processing apparatus according to claim 1,wherein a gas is discharged from the discharge port, and a liquid on thepolishing surface is vibrated or disturbed.
 3. The substrate processingapparatus according to claim 1, wherein the table is rotatable, thedischarge port is disposed on a downstream side of the suction openingin a rotation direction of the table, and a liquid is supplied from thedischarge port.
 4. The substrate processing apparatus according to claim3, wherein the liquid discharged from the discharge port is a processingsolution for processing a substrate.
 5. The substrate processingapparatus according to claim 1, wherein the table is rotatable, thedischarge port is disposed on an upstream side of the suction opening ina rotation direction of the table, and a liquid is supplied from thedischarge port.
 6. The substrate processing apparatus according to claim1, wherein a flow path leading to the discharge port is inclined in adirection opposite to a direction of the suction opening.
 7. Thesubstrate processing apparatus according to claim 1, wherein a distancebetween the discharge port and the suction opening is equal to or morethan a lower limit distance within which a range of a thin liquid filmon the polishing surface can be expanded by a fluid flow supplied fromthe discharge port.
 8. The substrate processing apparatus according toclaim 1, wherein a flow path leading to the discharge port is inclinedin a direction of the suction opening.
 9. The substrate processingapparatus according to claim 1, wherein a distance between the dischargeport and the suction opening is equal to or less than an upper limitdistance at which the polishing surface is hit by the fluid dischargedfrom the discharge port to cause the dust and/or debris to float andthen the floated dust and/or debris can be sucked from the suctionopening.
 10. The substrate processing apparatus according to claim 1,wherein the discharge port and the suction opening are positioned on anapproximately identical plane.
 11. The substrate processing apparatusaccording to claim 1, wherein a plurality of the discharge ports aredisposed in a radial direction of the table.
 12. The substrateprocessing apparatus according to claim 1, further comprising: apolishing liquid supply section which supplies a polishing liquid to thepolishing surface; and a substrate holding section which holds thesubstrate, wherein the discharge suction section is disposed on adownstream side of a polishing liquid supply nozzle in the rotationdirection of the table and is disposed on an upstream side of thesubstrate holding section in the rotation direction of the table. 13.The substrate processing apparatus according to claim 1, furthercomprising: a dresser for performing dressing of the polishing surface;and a polishing liquid supply section which supplies a polishing liquidto the polishing surface, wherein the discharge suction section isdisposed on a downstream side of the dresser in the rotation directionof the table and is disposed on an upstream side of the polishing liquidsupply section in the rotation direction of the table.
 14. The substrateprocessing apparatus according to claim 1, further comprising: asubstrate holding section which holds the substrate; and a dresser forperforming dressing of the polishing surface, wherein the dischargesuction section is disposed on a downstream side of the substrateholding section in the rotation direction of the table and is disposedon an upstream side of the dresser in the rotation direction of thetable.